I-V Characterization and Electrical Performance Analysis of Undoped, N-Type, and P-Type Silicon for Semiconductor Applications
DOI:
https://doi.org/10.65126/jocosir.v3i1.47Keywords:
Silicon doping, I–V characterization, electrical conductivity, N-type, P-type, semiconductor optimizationAbstract
Silicon remains the backbone of modern semiconductor technology; however, its intrinsic electrical limitations, such as low conductivity and restricted charge carrier concentration, constrain device performance. To enhance its functionality in electronic and photovoltaic applications, doping with suitable impurities is essential. This study focused on the I–V characterization and electrical performance analysis of undoped, N-type, and P-type silicon to assess the effect of doping on charge transport behavior. The experiment involved I–V characterization of intrinsic, N-type, and P-type silicon samples using precise materials, contact metals, and cleaning agents to ensure accuracy. A DC power supply, Source Measure Unit (Keithley 2400), and four-point probe station were employed for voltage application and current measurement. Samples were cleaned, coated with silver or aluminum contacts, annealed, and stored under nitrogen to prevent oxidation. I–V measurements were conducted under controlled environmental conditions, using calibrated equipment and multiple readings for accuracy. Data analysis in MATLAB included filtering, curve fitting, and extraction of key parameters like resistance and ideality factor to compare doped and undoped samples. The I–V characterization revealed clear differences between undoped and doped silicon samples. The undoped silicon exhibited Ohmic behavior with low conductivity ((5.3±0.2)×10⁻⁵ Ω⁻¹), while the N-doped ((1.4±0.1)×10⁻³ Ω⁻¹) and P-doped ((9.7±0.8)×10⁻⁴ Ω⁻¹) samples showed rectifying characteristics. N-type silicon displayed a lower turn-on voltage (0.65±0.02 V) than P-type (0.72±0.03 V), reflecting higher electron mobility. Ideality factors near unity (1.12 and 1.18) indicated diffusion-controlled transport. Conductivity improved 26-fold for N-type and 18-fold for P-type compared to intrinsic silicon, confirming doping’s strong influence on charge carrier concentration and validating measurement accuracy (standard deviation <3%). The study concludes that controlled doping significantly improves silicon’s electrical properties, making it more suitable for high-efficiency semiconductor and photovoltaic device applications.
References
Adegboyega, O., Adedokun, O., Olabisi, O., Sanusi, Y. K., & Fajinmi, G. R. (2022). Structural and optical studies of synthesized semiconductor NixZn1-xS nanostructure thin films for optoelectronic device applications. Nano Plus: Science and Technology of Nanomaterials, 4(1), 7-15.
Cai, Y., Zhou, H., Zhang, G., & Zhang, Y. W. (2016). Modulating carrier density and transport properties of MoS2 by organic molecular doping and defect engineering. Chemistry of Materials, 28(23), 8611-8621.
Cheng, H., Feng, Y., Fu, Y., Zheng, Y., Shao, Y., & Bai, Y. (2022). Understanding and minimizing non-radiative recombination losses in perovskite light-emitting diodes. Journal of Materials Chemistry C, 10(37), 13590-13610. https://doi.org/10.1039/D2TC01869A
Cho, C., Bittner, N., Choi, W., Hsu, J. H., Yu, C., & Grunlan, J. C. (2019). Thermally enhanced n‐type thermoelectric behavior in completely organic graphene oxide‐based thin films. Advanced Electronic Materials, 5(11), 1800465.
Deen, M.J., Pascal, F. (2017). Electrical Characterization of Semiconductor Materials and Devices. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Cham. https://doi.org/10.1007/978-3-319-48933-9_20
Du, Y., Wang, Z., Chen, H., Wang, H. Y., Liu, G., & Weng, Y. (2019). Effect of trap states on photocatalytic properties of boron-doped anatase TiO 2 microspheres studied by time-resolved infrared spectroscopy. Physical Chemistry Chemical Physics, 21(8), 4349-4358.
Gupta, K. M., & Gupta, N. (2015). Different Types of Diodes, Ideal and Real Diodes, Switching Diodes, Abrupt and Graded Junctions. In Advanced Semiconducting Materials and Devices (pp. 235-259). Cham: Springer International Publishing.
Gupta, K. M., & Gupta, N. (2015). Different Types of Diodes, Ideal and Real Diodes, Switching Diodes, Abrupt and Graded Junctions. In Advanced Semiconducting Materials and Devices (pp. 235-259). Cham: Springer International Publishing.
Guria, A. K., & Pradhan, N. (2016). Doped or not doped: Ionic impurities for influencing the phase and growth of semiconductor nanocrystals. Chemistry of Materials, 28(15), 5224-5237. https://doi.org/10.1021/acs.chemmater.6b02009
He, T., Stolte, M., Wang, Y., Renner, R., Ruden, P. P., Würthner, F., & Frisbie, C. D. (2021). Site-specific chemical doping reveals electron atmospheres at the surfaces of organic semiconductor crystals. Nature Materials, 20(11), 1532-1538.
Khan, M., Nowsherwan, G. A., Ali, R., Ahmed, M., Anwar, N., Riaz, S., Farooq, A., Hussain, S. S., Naseem, S., & Choi, J. R. (2023). Investigation of Photoluminescence and Optoelectronics Properties of Transition Metal-Doped ZnO Thin Films. Molecules, 28(24), 7963. https://doi.org/10.3390/molecules28247963
Lau, M. L., Burleigh, A., Terry, J., & Long, M. (2023). Materials characterization: Can artificial intelligence be used to address reproducibility challenges?. Journal of Vacuum Science & Technology A, 41(6).
Lu, Y., Yu, Z. D., Liu, Y., Ding, Y. F., Yang, C. Y., Yao, Z. F., ... & Pei, J. (2020). The critical role of dopant cations in electrical conductivity and thermoelectric performance of n-doped polymers. Journal of the American Chemical Society, 142(36), 15340-15348. https://doi.org/10.1021/jacs.0c05699
Polak, M. P., Scharoch, P., & Kudrawiec, R. (2020). The effect of isovalent doping on the electronic band structure of group IV semiconductors. Journal of Physics D: Applied Physics, 54(8), 085102. DOI 10.1088/1361-6463/abc503
Pop, M., & Botiz, I. (2025). Carrier Mobility, Electrical Conductivity, and Photovoltaic Properties of Ordered Nanostructures Assembled from Semiconducting Polymers. Materials, 18(19), 4580.
Rahman, M. H., & Mannodi-Kanakkithodi, A. (2025). Defect modeling in semiconductors: the role of first principles simulations and machine learning. Journal of Physics: Materials, 8(2), 022001.
Roccaforte, F., Giannazzo, F., & Greco, G. (2022). Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices. Micro, 2(1), 23-53. https://doi.org/10.3390/micro2010002
Sio, H. C., & MacDonald, D. (2016). Direct comparison of the electrical properties of multicrystalline silicon materials for solar cells: conventional p-type, n-type and high performance p-type. Solar Energy Materials and Solar Cells, 144, 339-346.
Wang, C., Chen, C., Kong, W., Wang, H., & Zhou, Z. (2025, August). Multi-parameter Degradation Modeling Method for Power MOSFETs Integrating Semiconductor Physics Degradation Data. In 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) (pp. 1-5). IEEE.
Zhang, J., Wang, J., Li, J., Debnath, T., Zhou, R., Wang, Z., ... & Wu, T. (2023). Atomic-Level Insights into Manganese-Environment-Related Photophysical Properties of II–III–VI Quantum Dots Using Well-Defined Nanofragments. The Journal of Physical Chemistry C, 127(32), 15951-15961. https://doi.org/10.1021/acs.jpcc.3c03940
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Copyright (c) 2025 Sunday Chimezie Anyaora , Tochukwu Obialor Nwokeocha, Innocent Chisom Chukwuma- Nwaokafor, Stephen A. Takim
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